Method for providing a photoresist defect in a semiconductor manufacturing process

专利摘要:
PURPOSE: A simulation method for inspecting a defect of semiconductor photoresist is provided to shorten an interval of experiment time and reduce fabricating cost by forming a simulated mask pattern after the density and size of a mask pattern necessary for forming a circuit pattern is determined, by determining whether the semiconductor photoresist is defective and by using the result of the determination in a real fabricating process. CONSTITUTION: The density of a circuit pattern for inspecting the defective development of the photoresist is determined(S102). The size of the circuit pattern for inspecting the defective development of the photoresist is determined(S104). The simulated mask pattern is formed based upon the density and size of the circuit pattern(S106). A process for selecting and experimenting the photoresist is performed by using the simulated mask pattern(S108). The data regarding whether the development of the photoresist is defective is extracted(S110). The data regarding whether the development of the photoresist is defective is used in the real semiconductor fabricating process(S112).
公开号:KR20030073998A
申请号:KR1020020013825
申请日:2002-03-14
公开日:2003-09-19
发明作者:서재경
申请人:동부전자 주식회사；
IPC主号:

专利说明:

METHOOD FOR PROVIDING A PHOTORESIST DEFECT IN A SEMICONDUCTOR MANUFACTURING PROCESS}
[2] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing techniques, and more particularly, to a method for simulating semiconductor photosensitive liquid simulation defects suitable for early detection and handling of developing defects in semiconductor photosensitive liquids in semiconductor lithography processes.
[3] In the semiconductor manufacturing process, especially the lithography process, early inspection of development defects is a very important factor in selecting the use of the photosensitive liquid.
[4] Such development defects depend largely on the mask pattern density required for circuit pattern formation, and it is known that development defects occur more easily as the ratio of open areas (circuit pattern non-formation areas due to exposure) on the mask is higher.
[5] On the other hand, semiconductor manufacturing processes are largely divided into memory and non-memory sectors, and various circuit patterns masks are used to manufacture such semiconductors.
[6] Since various masks used in the actual semiconductor wafer manufacturing process vary in density of the circuit pattern and the number of developing defects generated is high, it is not easy to detect developing defects in the photosensitive liquid using such masks. However, in order to increase the yield in a semiconductor manufacturing process, it is necessary to control even such a development defect.
[7] Accordingly, in the selection of the initial photoresist according to the production of various semiconductor products, in particular, the pattern density by the mask is different (generally, a product with a high pattern density does not have a large number of development defects). It is a very important issue.
[8] When this phenomenon occurs, there is a cost and time loss to identify the cause of the defect and determine whether the product is damaged. Since development defects are generated by a pattern density when using various masks in the semiconductor manufacturing process, and a comprehensive mechanism with photoresist manufacturers and various raw materials, there is no way to verify the development defects when a photoresist manufacturer ships a product. That is, it can confirm only through the mask process in a semiconductor manufacturer.
[9] If such a development defect occurs in the initial selection experiment of the photoresist, the semiconductor production can be produced at a desired time due to an increase in economic and time losses, such as reporting the development defect with the photoresist manufacturer and retesting the sample. There is a problem that can not be started.
[10] Therefore, there is a need for a technique capable of detecting and dealing with developing defects in the semiconductor photoresist pattern at an early stage.
[11] The present invention has been made in accordance with the above-described requirements, and the pattern density and the size of the mask required for circuit pattern formation is simulated to form a simulated mask pattern and then confirmed the presence of defects and applied to the actual manufacturing process based on the data Accordingly, an object of the present invention is to provide a method for simulating defects in semiconductor photoconductor liquid, which is used to detect defects in the photoresist at an early stage, thereby increasing reliability related to semiconductor manufacturing, such as shortening the experiment time and cost by the developer.
[12] In order to achieve the above object, the present invention provides a semiconductor photosensitive liquid simulation defect inspection method comprising the steps of: setting a density of a circuit pattern for a photosensitive liquid development defect inspection; Setting a size of a photoresist developing defect inspection circuit pattern; Forming a mock mask pattern based on the density and size of the circuit pattern; Extracting photoresist developing defect data by performing photoresist selection / experiment using a simulated mask pattern; It provides a semiconductor photosensitive liquid simulation defect inspection method comprising the step of applying the photosensitive development defect presence data to the actual semiconductor manufacturing process.
[1] 1 is a flow chart of a semiconductor photosensitive liquid simulation defect inspection process according to a preferred embodiment of the present invention.
[13] Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
[14] Prior to the description, the key technical gist of the present invention is to control the pattern density of the circuit pattern mask that can detect the development defect used early in the selection of the photoresist in the semiconductor lithography manufacturing process, and thereby to detect the development defect early. By this, it will be able to easily implement the object of the present invention from this technical idea.
[15] First, as described above, the photosensitive liquid is a circuit pattern forming means by a kind of chemical reaction, and obtains a desired circuit pattern by controlling this chemical reaction.
[16] Pattern density is important in controlling chemical reactions, and development defects are most likely to occur in masks with low pattern density because the by-products generated in chemical reactions do not wash away during the cleaning process and adhere to the wafer surface. This is because it becomes a state easy to do.
[17] That is, development defects by various processes of the semiconductor manufacturing process mainly occur in the mask region having a low pattern density.
[18] The present invention is characterized in that the mask is simulated with a low pattern density and applied to the initial photoresist selection experiment.
[19] 1 is a flowchart illustrating a semiconductor photosensitive liquid simulation defect inspection process according to a preferred embodiment of the present invention.
[20] First, when the photosensitive liquid simulation defect inspection according to the present invention is started in step S100, the flow advances to step S102 to set the density of the circuit pattern for the photosensitive liquid development defect inspection. This pattern density may preferably be set to 0.005 to 0.3%.
[21] Subsequently, in step S104, the size of the photoresist developing defect inspection circuit pattern is set. This pattern size may preferably be set to 0.15 to 0.4 mu m. In this case, such a pattern size is a circuit pattern size reproduced on a wafer, and may be particularly useful in space and hole circuit patterns.
[22] Thus, a simulated mask pattern is formed in step S106.
[23] By using the simulated mask pattern as described above in step S108, the photoresist selection / experiment may be performed to extract photoresist developing defect data.
[24] Finally, by applying the photoresist developing defect presence data in step S110 to the actual semiconductor manufacturing process, early detection of the photoresist developing defect is possible (S112).
[25] In this case, the mask for developing defect verification may be simply manufactured at a relatively low cost in a mask manufacturing company, and this fact will be readily understood by those skilled in the art.
[26] Therefore, in the selection / experiment of the photoresist used in the semiconductor manufacturing process, when a simulated development defect test of the photoresist is performed using a circuit pattern mask having a low pattern density, the development of the photoresist is detected early and the semiconductor manufacturing process It will save time and money, and start the semiconductor manufacturing process early.
[27] As mentioned above, although this invention was concretely demonstrated based on the Example, this invention is not limited to this Example, Of course, various changes are possible within the range which does not deviate from the summary.
[28] As described above, the present invention has the effect of establishing an early semiconductor manufacturing process, reducing the cost required for the selection / experiment of the photoresist, and increasing the semiconductor yield.

权利要求:
Claims (3)
[1" claim-type="Currently amended] In the semiconductor photosensitive liquid simulation defect inspection method,
Setting a density of a photoresist developing defect inspection circuit pattern;
Setting a size of a photoresist developing defect inspection circuit pattern;
Forming a mock mask pattern based on the density and size of the circuit pattern;
Extracting photoresist developing defect data by performing photosensitive liquid selection / experiment using the simulated mask pattern;
And applying the photoresist developing defect data to an actual semiconductor manufacturing process.
[2" claim-type="Currently amended] The method of claim 1,
And a density of the circuit pattern is set at 0.005 to 0.3%.
[3" claim-type="Currently amended] The method of claim 1,
The circuit pattern simulation defect inspection method, characterized in that the size of the circuit pattern is set to 0.15 to 0.4㎛.

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同族专利:

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公开号 | 公开日

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KR100423093B1|2004-03-16|

引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2002-03-14|Application filed by 동부전자 주식회사

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2002-03-14|Priority to KR10-2002-0013825A

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2003-09-19|Publication of KR20030073998A

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2004-03-16|Application granted

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2004-03-16|Publication of KR100423093B1

优先权:

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申请号 | 申请日 | 专利标题

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KR10-2002-0013825A|KR100423093B1|2002-03-14|2002-03-14|Method for providing a photoresist defect in a semiconductor manufacturing process|